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High-Chern-number and high-temperature quantum Hall effect without Landau levels.

Authors :
Ge, Jun
Liu, Yanzhao
Li, Jiaheng
Li, Hao
Luo, Tianchuang
Wu, Yang
Xu, Yong
Wang, Jian
Source :
National Science Review; Aug2020, Vol. 7 Issue 8, p1280-1287, 8p
Publication Year :
2020

Abstract

The quantum Hall effect (QHE) with quantized Hall resistance of h / νe <superscript>2</superscript> started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number | C | = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C > 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi<subscript>2</subscript>Te<subscript>4</subscript> devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20955138
Volume :
7
Issue :
8
Database :
Complementary Index
Journal :
National Science Review
Publication Type :
Academic Journal
Accession number :
145338223
Full Text :
https://doi.org/10.1093/nsr/nwaa089