Mg0.35Zn0.65O/Al/ZnO Photodetectors With Capability of Identifying Ultraviolet-A/Ultraviolet-B.

Authors :: Liu, Han-Yin
Hou, Fu-Yuan
Chu, Hung-Sheng
Source :: IEEE Transactions on Electron Devices; Jul2020, Vol. 67 Issue 7, p2812-2818, 7p
Publication Year :: 2020
Abstract: This article proposes an Mg<subscript>0.35</subscript>Zn<subscript>0.65</subscript>O/Al/ZnO structure, with which photodetectors (PDs) are able to identify ultraviolet (UV)-A (400–320 nm) and UV-B (320–280 nm). Both Mg<subscript>0.35</subscript>Zn<subscript>0.65</subscript>O and ZnO thin films are deposited using mist atmospheric pressure chemical vapor deposition (MAPCVD) method. At first, the material characteristics such as crystal structure, oxygen deficiency, energy bandgap, and photoluminescence (PL) of Mg<subscript>0.35</subscript>Zn<subscript>0.65</subscript>O and ZnO thin films are analyzed. The present Mg<subscript>0.35</subscript>Zn<subscript>0.65</subscript>O/Al/ZnO PD shows UV-B to UV-A rejection ratio of 15 in the spectral responsivity characteristics. Additionally, the detectivity characteristics suggest that the present Mg<subscript>0.35</subscript>Zn<subscript>0.65</subscript>O/Al/ZnO PD is able to identify UV-A and UV-B. Furthermore, the Mg<subscript>0.35</subscript>Zn<subscript>0.65</subscript>O/ZnO hetero-interface enhances the carrier mobility which further improves the response time. [ABSTRACT FROM AUTHOR]

Subjects :: PHOTODETECTORS
CHEMICAL vapor deposition
THIN films
ACTION spectrum
ZINC oxide films

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