Cite

Radiation-Hardened, Read-Disturbance-Free New-Quatro-10T Memory Cell for Aerospace Applications.

MLA

Wen, Liang, et al. “Radiation-Hardened, Read-Disturbance-Free New-Quatro-10T Memory Cell for Aerospace Applications.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 28, no. 8, Aug. 2020, pp. 1935–39. EBSCOhost, https://doi.org/10.1109/TVLSI.2020.2991755.



APA

Wen, L., Zhang, Y., & Wang, P. (2020). Radiation-Hardened, Read-Disturbance-Free New-Quatro-10T Memory Cell for Aerospace Applications. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 28(8), 1935–1939. https://doi.org/10.1109/TVLSI.2020.2991755



Chicago

Wen, Liang, Yuejun Zhang, and Pengjun Wang. 2020. “Radiation-Hardened, Read-Disturbance-Free New-Quatro-10T Memory Cell for Aerospace Applications.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems 28 (8): 1935–39. doi:10.1109/TVLSI.2020.2991755.