Controlling the Doping Depth in Silicon Micropillars.

Featured Application: The proposed method can be utilized to fabricate micropillar solar cells. Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>10²⁰ cm⁻³) that will allow the formation of a quasi-neutral region (QNR) and space charge region (SCR) in its tiny geometry. This experimental study investigates an approach that allows shallow and heavy doping in silicon micropillars. It aims to demonstrate that silicon dioxide (SiO₂) can be used to control the dopant penetration depth in silicon micropillars. [ABSTRACT FROM AUTHOR]