Dielectric temperature stability and energy storage performance of B-site Sn4+-doped BNKBST ceramics.

The 0.65Bi_0.5Na_0.25K_0.25TiO₃–0.35Bi_0.2Sr_0.7Ti_1−xSn_xO₃ (BNKBST-xSn) ceramics were synthesized via a solid-phase reactive sintering technique. The effects of doping Sn⁴⁺ ions on the energy storage, dielectric, ferroelectric properties and microstructure characteristics for BNKBST ceramics were systematically studied. Remarkably, BNKBST-0.02Sn exhibits a superior dielectric temperature stability, manifested as the change rate for dielectric constant ∆ε/ε_150°C is smaller than 15% during a very wide temperature range of 30–400 °C. In addition, BNKBST-0.02Sn ceramic achieves a high energy storage density W_rec = 0.81 J/cm³ (under the electric field 80 kV/cm) with an outstanding energy storage efficiency 89.5%, which make it reasonable to be applied in dielectric capacitors due to its excellent dielectric thermal stability and energy storage properties. The electrical conductivity behaviors of BNKBST-xSn were also analyzed with the assistance of impedance spectroscopy. [ABSTRACT FROM AUTHOR]