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Fabrication of Cu2O/Si nanowires photocathode and its photoelectrochemical properties.

Authors :
Hu, Yun
Luo, Yufeng
Liu, Shaohuan
Zhang, Fayun
Rao, Senlin
Wang, Fahui
Li, Yunming
Li, Shuigen
Zhong, Wei
Source :
Semiconductor Science & Technology; Apr2020, Vol. 35 Issue 4, p1-7, 7p
Publication Year :
2020

Abstract

Using a simple dipping method, Cu<subscript>2</subscript>O nanoparticles were successfully deposited on the surface and the sidewall of silicon nanowires (Si NWs). As a photocathode, the Cu<subscript>2</subscript>O/Si NWs composites not only show a low reflectance of 10.75% in the 300–900 nm wavelength range, but also can enhance the separation of the photogenerated electron–hole pairs due to the junction formed by Cu<subscript>2</subscript>O and Si NWs. The Cu<subscript>2</subscript>O/Si NWs-20 min photocathode achieved a photocurrent of 3.5 mA cm<superscript>−2</superscript> at −0.8 V versus AgCl/Ag and a photoconversion efficiency of 1.2%. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02681242
Volume :
35
Issue :
4
Database :
Complementary Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
144665636
Full Text :
https://doi.org/10.1088/1361-6641/ab73e8