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Fabrication of Cu2O/Si nanowires photocathode and its photoelectrochemical properties.
- Source :
- Semiconductor Science & Technology; Apr2020, Vol. 35 Issue 4, p1-7, 7p
- Publication Year :
- 2020
-
Abstract
- Using a simple dipping method, Cu<subscript>2</subscript>O nanoparticles were successfully deposited on the surface and the sidewall of silicon nanowires (Si NWs). As a photocathode, the Cu<subscript>2</subscript>O/Si NWs composites not only show a low reflectance of 10.75% in the 300–900 nm wavelength range, but also can enhance the separation of the photogenerated electron–hole pairs due to the junction formed by Cu<subscript>2</subscript>O and Si NWs. The Cu<subscript>2</subscript>O/Si NWs-20 min photocathode achieved a photocurrent of 3.5 mA cm<superscript>−2</superscript> at −0.8 V versus AgCl/Ag and a photoconversion efficiency of 1.2%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 35
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 144665636
- Full Text :
- https://doi.org/10.1088/1361-6641/ab73e8