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Defect compensation in the p-type transparent oxide Ba2BiTaO6.
- Source :
- Journal of Materials Chemistry C; 7/21/2020, Vol. 8 Issue 27, p9352-9357, 6p
- Publication Year :
- 2020
-
Abstract
- Ba<subscript>2</subscript>BiTaO<subscript>6</subscript> is a transparent p-type oxide recently discovered and exhibiting attractive hole mobility but low carrier concentration. Using first-principles computations, we study how defects influence the carrier concentration in Ba<subscript>2</subscript>BiTaO<subscript>6</subscript>. The calculated defect formation energies confirm that K is an adequate p-type shallow extrinsic dopant but that high p-type doping is prevented by the presence of compensating, "hole-killing", intrinsic defects: O vacancies but also Ta on Bi anti-sites. Our work stresses the inherent difficulty in doping Ba<subscript>2</subscript>BiTaO<subscript>6</subscript> to high carrier concentration and discusses a few avenues towards this goal. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20507526
- Volume :
- 8
- Issue :
- 27
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 144618683
- Full Text :
- https://doi.org/10.1039/c9tc06919d