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Research on photo-generated carriers escape in PIN and NIN structures with quantum wells.
- Source :
- Applied Physics Express; Jul2020, Vol. 13 Issue 7, p1-4, 4p
- Publication Year :
- 2020
-
Abstract
- Relevant experiments have shown that more than 90% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (a PIN structure). The escape time of the photo-generated carriers is on the femtosecond scale, much less than their relaxation time. In contrast, photo-generated carriers cannot escape from MQWs sandwiched between two n-type layers (a NIN structure) with bias. We found that there is a high barrier for holes and that the electric field intensity in QWs is close to zero, resulting in holes accumulating and a low escape efficiency in a NIN structure with bias. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 13
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 144455878
- Full Text :
- https://doi.org/10.35848/1882-0786/ab9fc6