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High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy.

Authors :
Miyoshi, M.
Ishikawa, H.
Egawa, T.
Asai, K.
Mouri, M.
T., Shibata
Tanaka, M.
Oda, O.
Source :
Applied Physics Letters; 9/6/2004, Vol. 85 Issue 10, p1710-1712, 3p, 1 Diagram, 2 Charts, 1 Graph
Publication Year :
2004

Abstract

Al<subscript>0.26</subscript>Ga<subscript>0.74</subscript>N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diam epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy. It was found that AlN/sapphire templates significantly enhanced the electron mobility of the two-dimensional electron gas (2DEG) confined at the GaN channel. This can be explained by the high-crystal-quality GaN channel realized by the use of epitaxial AlN/sapphire templates as substrates. The very high Hall mobilities of approximately 2100 cm<superscript>2</superscript>/V s at room temperature and approximately 17 000 cm<superscript>2</superscript>/V s at 77 K with a 2DEG density of approximately 1×10<superscript>13</superscript>/cm<superscript>2</superscript> were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diam epitaxial AlN/sapphire templates. The Hall mobility of AlGaN/AlN/GaN heterostructures on epitaxial AlN/sapphire templates reached a very high value of 25 500 cm<superscript>2</superscript>/V s at 15 K. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
85
Issue :
10
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
14399959
Full Text :
https://doi.org/10.1063/1.1790073