A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx.

MLA

Khanam, Afrina, et al. “A Demonstration of Donor Passivation through Direct Formation of V-Asi Complexes in As-Doped Ge1−xSnx.” Journal of Applied Physics, vol. 127, no. 19, May 2020, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0003999.

APA

Khanam, A., Vohra, A., Slotte, J., Makkonen, I., Loo, R., Pourtois, G., & Vandervorst, W. (2020). A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx. Journal of Applied Physics, 127(19), 1–6. https://doi.org/10.1063/5.0003999

Chicago

Khanam, Afrina, Anurag Vohra, Jonatan Slotte, Ilja Makkonen, Roger Loo, Geoffrey Pourtois, and Wilfried Vandervorst. 2020. “A Demonstration of Donor Passivation through Direct Formation of V-Asi Complexes in As-Doped Ge1−xSnx.” Journal of Applied Physics 127 (19): 1–6. doi:10.1063/5.0003999.