Cite
Eco-Friendly Fully Water-Driven HfGdOx Gate Dielectrics and Its Application in Thin-Film Transistors and Logic Circuits.
MLA
Zhang, Chong, et al. “Eco-Friendly Fully Water-Driven HfGdOx Gate Dielectrics and Its Application in Thin-Film Transistors and Logic Circuits.” IEEE Transactions on Electron Devices, vol. 67, no. 3, Mar. 2020, pp. 1001–08. EBSCOhost, https://doi.org/10.1109/TED.2019.2963224.
APA
Zhang, C., He, G., Fang, Z., Zhang, Y., Xia, Y., Yang, B., Wang, W., Alam, F., & Cui, J. (2020). Eco-Friendly Fully Water-Driven HfGdOx Gate Dielectrics and Its Application in Thin-Film Transistors and Logic Circuits. IEEE Transactions on Electron Devices, 67(3), 1001–1008. https://doi.org/10.1109/TED.2019.2963224
Chicago
Zhang, Chong, Gang He, Zebo Fang, Yongchun Zhang, Yufeng Xia, Bing Yang, Wenhao Wang, Fakhari Alam, and Jingbiao Cui. 2020. “Eco-Friendly Fully Water-Driven HfGdOx Gate Dielectrics and Its Application in Thin-Film Transistors and Logic Circuits.” IEEE Transactions on Electron Devices 67 (3): 1001–8. doi:10.1109/TED.2019.2963224.