Extraction of intrinsic field-effect mobility of graphene considering effects of gate-bias-induced contact modulation.

MLA

Lee, Chang-Ju, et al. “Extraction of Intrinsic Field-Effect Mobility of Graphene Considering Effects of Gate-Bias-Induced Contact Modulation.” Journal of Applied Physics, vol. 127, no. 18, May 2020, pp. 1–9. EBSCOhost, https://doi.org/10.1063/1.5128050.

APA

Lee, C.-J., Park, H., Kang, J., Lee, J., Choi, M., & Park, H. (2020). Extraction of intrinsic field-effect mobility of graphene considering effects of gate-bias-induced contact modulation. Journal of Applied Physics, 127(18), 1–9. https://doi.org/10.1063/1.5128050

Chicago

Lee, Chang-Ju, Honghwi Park, Jaewoon Kang, Junyeong Lee, Muhan Choi, and Hongsik Park. 2020. “Extraction of Intrinsic Field-Effect Mobility of Graphene Considering Effects of Gate-Bias-Induced Contact Modulation.” Journal of Applied Physics 127 (18): 1–9. doi:10.1063/1.5128050.