Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application.

MLA

Shih, Chien-Fu, et al. “Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and Their Anti-Surge Application.” Crystals (2073-4352), vol. 10, no. 4, Apr. 2020, p. 292. EBSCOhost, https://doi.org/10.3390/cryst10040292.

APA

Shih, C.-F., Hsieh, Y.-L., Chang, L.-B., Jeng, M.-J., Ding, Z.-X., & Huang, S.-A. (2020). Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application. Crystals (2073-4352), 10(4), 292. https://doi.org/10.3390/cryst10040292

Chicago

Shih, Chien-Fu, Yu-Li Hsieh, Liann-Be Chang, Ming-Jer Jeng, Zi-Xin Ding, and Shao-An Huang. 2020. “Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and Their Anti-Surge Application.” Crystals (2073-4352) 10 (4): 292. doi:10.3390/cryst10040292.