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Role of WO3 nanoparticles in electrical and dielectric properties of BaTiO3–SrTiO3 ceramics.

Authors :
Slimani, Y.
Unal, B.
Almessiere, M. A.
Hannachi, E.
Yasin, Ghulam
Baykal, A.
Ercan, I.
Source :
Journal of Materials Science: Materials in Electronics; May2020, Vol. 31 Issue 10, p7786-7797, 12p
Publication Year :
2020

Abstract

(BaTiO<subscript>3</subscript>–SrTiO<subscript>3</subscript>)/(WO<subscript>3</subscript>)<subscript>x</subscript> ceramics with x = 0 up to 5% were synthesized using solid-state reaction via high-energy ballf milling technique. Various characterization techniques were used including X-ray powder diffraction (XRD), scanning electron microscope (SEM), Fourier transform-infrared spectroscopy (FT-IR), and UV–visible diffuse reflectance (DR) spectrophotometer. Structural analysis via XRD indicates the formation of two separate phases of SrTiO<subscript>3</subscript> (STO) and BaTiO<subscript>3</subscript> (BTO) having both cubic structures. The presence of BaWO<subscript>4</subscript> as impurity was detected for higher concentration. SEM observations show a reduction in the average grains size with increasing WO<subscript>3</subscript> addition. In comparison with free-added ceramic, the optical band gap energy (E<subscript>g</subscript>) shows a slight increase with WO<subscript>3</subscript> addition. Contextual investigations on the electrical and dielectric properties of various WO<subscript>3</subscript> added to BTO–STO ceramics have been used to evaluate conductivity (σ ), dielectric constant and loss ( ε r ′ and ε r ″ ), and dissipation factor ( t a n δ ) against both frequency and dc bias voltages. Generally, both σ and ε r ″ correspond to the tendency of the power law to frequency. However, dc bias has been noticed to be lesser affecting the conduction mechanisms, which has a small variation for various WO<subscript>3</subscript> addition ratios. In addition, the dissipation factor was found to be highly dependent on both the addition ratio and the frequency as well as dc bias applied. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
31
Issue :
10
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
143000770
Full Text :
https://doi.org/10.1007/s10854-020-03317-7