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Epitaxial growth of β-Ga2O3/ε-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics.
- Source :
- Proceedings of SPIE; 12/10/2019, Vol. 11281, p112810G-112810G-5, 1p
- Publication Year :
- 2019
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 11281
- Database :
- Complementary Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Conference
- Accession number :
- 142772157
- Full Text :
- https://doi.org/10.1117/12.2544427