Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors.

This study theoretically investigates the effects of band structure parameters, such as the bandgap, effective mass, and Brillouin zone (BZ) width, on impact ionization coefficients. A Monte-Carlo simulation considering analytical and tunable band structures reveals that the smaller BZ width significantly reduces impact ionization coefficients, and its impacts can outperform those of the bandgap. The smaller BZ width also leads to positive temperature dependence of impact ionization coefficients, which is discussed focusing on the occurrence of the Bloch oscillation. Our results show the importance of the BZ width in discussing the behavior of impact ionization coefficients. [ABSTRACT FROM AUTHOR]