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Thin-film flip-chip UVB LEDs realized by electrochemical etching.
- Source :
- Applied Physics Letters; 3/23/2020, Vol. 116 Issue 12, p1-5, 5p, 5 Color Photographs, 2 Graphs
- Publication Year :
- 2020
-
Abstract
- We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al 0.37 Ga 0.63 N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs. [ABSTRACT FROM AUTHOR]
- Subjects :
- ETCHING
OPTICAL properties
ELECTROLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 116
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 142434364
- Full Text :
- https://doi.org/10.1063/1.5143297