Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD.

Details

Language :

English

ISSN :

17426588

Volume :

1482

Issue :

1

Database :

Complementary Index

Journal :

Journal of Physics: Conference Series

Publication Type :

Academic Journal

Accession number :

142419013

Full Text :

https://doi.org/10.1088/1742-6596/1482/1/012017