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Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO&sub3; Thin Films Prepared by a Diol-Based Sol-Gel Method.

Authors :
Ming-Cheng Kao
Ying-Chung Chen
Hone-Zern Chen
Chih-Ming Wang
Yi-Ju Li
Source :
Ferroelectrics; 2004, Vol. 304 Issue 1, p151-154, 4p
Publication Year :
2004

Abstract

LiTaO<subscript>3</subscript> thin films were deposited onto Pt(111)/SiO<subscript>2</subscript>/Si(1000) substrates using the sol-gel method and rapid thermal annealed in an oxygen atmosphere with a heating rate of 600˜3000°C/min. The leakage currents of the lithium tantalite thin films were measured and its leakage current mechanism was investigated. It was found that the leakage current was affected by the interface between the Pt electrode and LiTaO<subscript>3</subscript> thin films. In the low electric field region, the leakage current was controlled by Poole-Frenkel emission. On the other hand, the mechanism can be explained by Schottky emission from the Pt electrode in the high field region. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00150193
Volume :
304
Issue :
1
Database :
Complementary Index
Journal :
Ferroelectrics
Publication Type :
Academic Journal
Accession number :
14236016
Full Text :
https://doi.org/10.1080/00150190490457799