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Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO&sub3; Thin Films Prepared by a Diol-Based Sol-Gel Method.
- Source :
- Ferroelectrics; 2004, Vol. 304 Issue 1, p151-154, 4p
- Publication Year :
- 2004
-
Abstract
- LiTaO<subscript>3</subscript> thin films were deposited onto Pt(111)/SiO<subscript>2</subscript>/Si(1000) substrates using the sol-gel method and rapid thermal annealed in an oxygen atmosphere with a heating rate of 600˜3000°C/min. The leakage currents of the lithium tantalite thin films were measured and its leakage current mechanism was investigated. It was found that the leakage current was affected by the interface between the Pt electrode and LiTaO<subscript>3</subscript> thin films. In the low electric field region, the leakage current was controlled by Poole-Frenkel emission. On the other hand, the mechanism can be explained by Schottky emission from the Pt electrode in the high field region. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00150193
- Volume :
- 304
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Ferroelectrics
- Publication Type :
- Academic Journal
- Accession number :
- 14236016
- Full Text :
- https://doi.org/10.1080/00150190490457799