Electrical Transport Properties of Gallium Phosphide under High Pressure.

The electrical transport properties of gallium phosphide (GaP) under high pressure (up to 50 GPa) are investigated using in situ impedance‐spectrum and Hall‐effect measurements. A discontinuous resistance is observed at 9.9 GPa because of the pressure‐induced grain boundary effect, whereas the pressure‐induced metallization of GaP occurred at ≈24.6 GPa. The metallization transition is determined by measuring the temperature‐dependent resistance and resistivity, and the transition is observed to be reversible. The main cause of the sharp decrease in the resistance and resistivity is a pressure‐induced structural phase transition at 39.3 GPa, as reflected by the measured Hall parameters. [ABSTRACT FROM AUTHOR]