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Exploring the Advantages of Single-Ended-Input CMOS Self-Biased Amplifiers.

Authors :
Cabrera, Fabian L.
Source :
IEEE Transactions on Circuits & Systems. Part II: Express Briefs; Mar2020, Vol. 67 Issue 3, p410-414, 5p
Publication Year :
2020

Abstract

This brief presents the analysis of self-biased topologies to implement single-ended-input CMOS amplifiers. We depart from basic amplifying stages to construct the self-biased circuits. We propose an amplifier based on the common-source and cascode configurations with active load, in which all three transistors are self-biased. This translates into important advantages for the amplifier: less power consumption since biasing circuits are no needed, and a robust design because all transistors are guaranteed to be in the saturation region even with process, temperature, or supply variations. The only drawback of this topology is the low power-supply rejection. A prototype was designed in a 130-nm CMOS technology to have a gain of 40 dB in the frequency band between 100 kHz and 5 MHz. The measurements of the circuit demonstrated that the amplifier fulfilled the specifications at the nominal voltage (1.2 V) while consuming 13 $\mu \text{A}$. Furthermore, the circuit functions as amplifier for supply voltages as low as 400 mV and such high as 1.5 V, probing the flexibility of self-biased circuits. That flexibility can be explored in the future to design adaptive systems and to facilitate analog design automation. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15497747
Volume :
67
Issue :
3
Database :
Complementary Index
Journal :
IEEE Transactions on Circuits & Systems. Part II: Express Briefs
Publication Type :
Academic Journal
Accession number :
142009189
Full Text :
https://doi.org/10.1109/TCSII.2019.2915831