Back to Search Start Over

Enhanced thermoelectric properties of n-type Bi2Te2.7Se0.3 for power generation.

Authors :
Chen, Xi
Cai, Fanggong
Dong, Rong
Lei, Xiaobo
Sui, Runqing
Qiu, Lanxin
Zeng, Zhili
Sun, Wei
Zheng, Hao
Zhang, Qinyong
Source :
Journal of Materials Science: Materials in Electronics; Mar2020, Vol. 31 Issue 6, p4924-4930, 7p
Publication Year :
2020

Abstract

The abundant waste heat (below 500 K) from industry and automobile exhaust stimulate the development of thermoelectric materials for power generation. The commercial Bi<subscript>2</subscript>Te<subscript>3</subscript>-based alloys are generally used near room temperature. Herein, n-type Bi<subscript>2</subscript>Te<subscript>2.7+x</subscript>Se<subscript>0.3</subscript> was prepared by a method of mechanical alloying combined with hot pressing, which is more efficient, time-saving, and energy-saving than the method of melting and spark plasma sintering. The n-type Bi<subscript>2</subscript>Te<subscript>2.7</subscript>Se<subscript>0.3</subscript> being suitable for power generation (below 500 K) is obtained by manipulating the intrinsic point defects to enhance carrier concentration and suppress the intrinsic excitation at elevated temperature using a tiny amount of excess Te. Enhanced carrier concentration improves electrical conductivity, while enhanced phonon scattering reduces lattice thermal conductivity, originating from increased anti-site defects Te<superscript>.</superscript><subscript>Bi</subscript> in Te-rich condition. Consequently, the enhanced ZT peak gradually shifts to higher temperature while increasing the excess Te content. The maximum ZT peak of 0.9 at 373 K and an average ZT of 0.82 between 300 and 498 K are obtained in Bi<subscript>2</subscript>Te<subscript>2.71</subscript>Se<subscript>0.3</subscript>, indicating potential for thermoelectric power generation (below 500 K). [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
31
Issue :
6
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
141986132
Full Text :
https://doi.org/10.1007/s10854-020-03057-8