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Gallium nitride tunneling field-effect transistors exploiting polarization fields.
- Source :
- Applied Physics Letters; 2/18/2020, Vol. 116 Issue 7, p1-5, 5p, 3 Diagrams, 4 Graphs
- Publication Year :
- 2020
-
Abstract
- This report showcases a vertical tunnel field effect transistor (TFET) fabricated from a GaN/InGaN heterostructure and compares it to a gated vertical GaN p-n diode. By including a thin InGaN layer, the interband tunneling in the TFET is increased compared to the gated homojunction diode. This leads to an increased drain current of 57 μA/μm and a reduced subthreshold swing of 102 mV/dec, from 240 mV/dec. However, trap assisted tunneling prevents devices from realizing subthreshold slopes below the Boltzmann limit of 60 mV/dec. Nevertheless, this work shows the capability of tunnel field effect transistors to be realized in GaN by taking advantage of the spontaneous and piezoelectric polarization in the III-N material system. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 116
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 141883241
- Full Text :
- https://doi.org/10.1063/1.5132329