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Monolayer GaN excitonic deep ultraviolet light emitting diodes.
- Source :
- Applied Physics Letters; 1/6/2020, Vol. 116 Issue 1, p1-5, 5p, 1 Diagram, 4 Graphs
- Publication Year :
- 2020
-
Abstract
- We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the AlN barrier thickness. Detailed optical measurements and direct correlation with first-principles calculations based on density functional and many-body perturbation theory suggest that charge carrier recombination occurs predominantly via excitons in the extremely confined monolayer GaN/AlN heterostructures, with exciton binding energy exceeding 200 meV. We have further demonstrated deep ultraviolet light-emitting diodes (LEDs) with the incorporation of single and double monolayer GaN, which operate at 238 and 270 nm, respectively. These unique deep ultraviolet LEDs exhibit highly stable emission and a small turn-on voltage around 5 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 116
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 141173096
- Full Text :
- https://doi.org/10.1063/1.5124828