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Monolayer GaN excitonic deep ultraviolet light emitting diodes.

Authors :
Wu, Y.
Liu, X.
Wang, P.
Laleyan, D. A.
Sun, K.
Sun, Y.
Ahn, C.
Kira, M.
Kioupakis, E.
Mi, Z.
Source :
Applied Physics Letters; 1/6/2020, Vol. 116 Issue 1, p1-5, 5p, 1 Diagram, 4 Graphs
Publication Year :
2020

Abstract

We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the AlN barrier thickness. Detailed optical measurements and direct correlation with first-principles calculations based on density functional and many-body perturbation theory suggest that charge carrier recombination occurs predominantly via excitons in the extremely confined monolayer GaN/AlN heterostructures, with exciton binding energy exceeding 200 meV. We have further demonstrated deep ultraviolet light-emitting diodes (LEDs) with the incorporation of single and double monolayer GaN, which operate at 238 and 270 nm, respectively. These unique deep ultraviolet LEDs exhibit highly stable emission and a small turn-on voltage around 5 V. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
116
Issue :
1
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
141173096
Full Text :
https://doi.org/10.1063/1.5124828