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Modelling of dual-port computing operations of a phase-change memory cell.

Authors :
Hao Zhang
Rui-Hao Zhao
Fan Zhang
Zhen Li
Xiang-Shui Miao
Source :
Journal of Physics D: Applied Physics; 3/6/2020, Vol. 53 Issue 10, p1-1, 1p
Publication Year :
2020

Abstract

The general model of a phase-change memory (PCM) cell is very complex due to electrical property, thermal transfer and crystal growth. In this paper the general model is equivalent to an RC circuit, via which the dependence of the cell resistance on the number of pulses (Set or Reset) was investigated. Moreover, as for dual-port asynchronous operations of a pore-type PCM cell, a double-capacitor-based cell model was proposed. By simulation on the model we verified feasibility of the cell’s logic and arithmetic operations. In addition, the simulation results of addition and subtraction show that the resistance changes linearly with a short pulse sequence. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
53
Issue :
10
Database :
Complementary Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
141126981
Full Text :
https://doi.org/10.1088/1361-6463/ab6054