Novel MIS Ge-Si Quantum-Dot Infrared Photodetectors.

The metal-insulator-semiconductor (MIS) Ge-Si quantum-dot infrared photodetectors (QDIPs) are successfully demonstrated. Using oxynitride as gate dielectric instead of oxide, the operating temperature reaches 140 and 200 K for 3-10 and 2-3 µm detection, respectively. From the photoluminescence spectrum, the quantum-dot structures are responsible for the 2-3 µm response with high operation temperature, and the wetting layer structures may be responsible for the 3-10 µm response. This novel MIS Ge/Si QDIP can increase the functionality of Si chip such as noncontact temperature sensing and is compatible with ultra-large scale integration technology. [ABSTRACT FROM AUTHOR]