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Mechanism of Improved Luminescence Intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) Under Thermal and Chemical Treatments.
- Source :
- IEEE Photonics Journal; Dec2019, Vol. 11 Issue 6, p1-8, 8p
- Publication Year :
- 2019
-
Abstract
- In this work, the influences of thermal annealing and chemical passivation on the optical and electrical properties of ultraviolet light-emitting-diode (UV-LED) were investigated. The electroluminescence (EL) intensities of the LEDs under KOH treatment and thermal annealing increased by 48% and 81%, respectively compared to as-fabricated LED under current level of 10 mA. Cathodoluminescence (CL) mapping of UV-LEDs confirmed no variation of the density of the non-radiative recombination centers after surface treatments, and no obvious change in surface morphology was identified due to lacking of energy for surface atom migration. However, Raman spectroscopy indicates a relaxation of compressive strains inside the thin film after both thermal and chemical treatments, and conductive atomic force microscopy (c-AFM) also illustrated reduced leakage current after KOH passivation, which are responsible for the improved luminescence properties of UV-LEDs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19430655
- Volume :
- 11
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Photonics Journal
- Publication Type :
- Academic Journal
- Accession number :
- 141051766
- Full Text :
- https://doi.org/10.1109/JPHOT.2019.2950049