Effect of Heavily P-Doped Base on Radiative Recombination of Transistor Laser.

MLA

Hsieh, Chi-Ti, and Shu-Wei Chang. “Effect of Heavily P-Doped Base on Radiative Recombination of Transistor Laser.” IEEE Journal of Selected Topics in Quantum Electronics, vol. 25, no. 6, Nov. 2019, pp. 1–8. EBSCOhost, https://doi.org/10.1109/JSTQE.2019.2918946.

APA

Hsieh, C.-T., & Chang, S.-W. (2019). Effect of Heavily P-Doped Base on Radiative Recombination of Transistor Laser. IEEE Journal of Selected Topics in Quantum Electronics, 25(6), 1–8. https://doi.org/10.1109/JSTQE.2019.2918946

Chicago

Hsieh, Chi-Ti, and Shu-Wei Chang. 2019. “Effect of Heavily P-Doped Base on Radiative Recombination of Transistor Laser.” IEEE Journal of Selected Topics in Quantum Electronics 25 (6): 1–8. doi:10.1109/JSTQE.2019.2918946.