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Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy.
- Source :
- Acta Physica Polonica: A; Oct2019, Vol. 136 Issue 4, p608-612, 5p
- Publication Year :
- 2019
-
Abstract
- This paper reports on molecular beam epitaxy of GaSe 2D-layers on GaAs(001) substrates at growth temperatures of T<subscript>S</subscript> ≈ 400-540 °C as well as studies of their structural and optical properties. Transmission electron microscopy and the Raman spectroscopy techniques have established a correlation between the molecular beam epitaxy growth conditions and the GaSe polytypes being formed. It has been shown that GaSe layers grown at T<subscript>S</subscript> ≈ 400 °C can be characterized as γ-GaSe polytype with a rhombohedral crystal lattice structure, whereas the layers grown at T<subscript>S</subscript> ≈ 500 °C have a hexagonal structure and possess a ε-GaSe polytype. The latter also exhibit strong near band-edge photoluminescence at T = 300 K. The strong anisotropy of the photoluminescence intensity in an array of GaSe nanoplatelets has been revealed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 05874246
- Volume :
- 136
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Acta Physica Polonica: A
- Publication Type :
- Academic Journal
- Accession number :
- 139850302
- Full Text :
- https://doi.org/10.12693/APhysPolA.136.608