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Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite.

Authors :
Jia Lin
Hong Chen
Yang Gao
Yao Cai
Jianbo Jin
Etman, Ahmed S.
Joohoon Kanga
Teng Lei
Zhenni Lin
Folgueras, Maria C.
Li Na Quan
Qiao Kong
Sherburne, Matthew
Asta, Mark
Junliang Sun
Toney, Michael F.
Junqiao Wu
Peidong Yang
Source :
Proceedings of the National Academy of Sciences of the United States of America; 11/19/2019, Vol. 116 Issue 47, p23404-23409, 6p
Publication Year :
2019

Abstract

Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In<superscript>+</superscript>/In<superscript>3+</superscript>) inorganic halide perovskite with the composition of Cs<subscript>2</subscript>In(I)In(III)Cl<subscript>6</subscript> in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Ã…, c = 11.0113(16) Ã… if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00278424
Volume :
116
Issue :
47
Database :
Complementary Index
Journal :
Proceedings of the National Academy of Sciences of the United States of America
Publication Type :
Academic Journal
Accession number :
139849415
Full Text :
https://doi.org/10.1073/pnas.1907576116