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Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite.
- Source :
- Proceedings of the National Academy of Sciences of the United States of America; 11/19/2019, Vol. 116 Issue 47, p23404-23409, 6p
- Publication Year :
- 2019
-
Abstract
- Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In<superscript>+</superscript>/In<superscript>3+</superscript>) inorganic halide perovskite with the composition of Cs<subscript>2</subscript>In(I)In(III)Cl<subscript>6</subscript> in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Ã…, c = 11.0113(16) Ã… if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- PHASE transitions
PEROVSKITE
INDIUM
HALIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00278424
- Volume :
- 116
- Issue :
- 47
- Database :
- Complementary Index
- Journal :
- Proceedings of the National Academy of Sciences of the United States of America
- Publication Type :
- Academic Journal
- Accession number :
- 139849415
- Full Text :
- https://doi.org/10.1073/pnas.1907576116