Materials issues and devices of α- and β-Ga2O3.

Ga₂O₃ is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV (depending on its crystal structure), which is much greater than those of conventional wide bandgap semiconductors such as SiC and GaN (3.3 eV and 3.4 eV, respectively). Therefore, Ga₂O₃ is promising for future power device applications, and further high-performance is expected compared to those of SiC or GaN power devices, which are currently in the development stage for commercial use. Ga₂O₃ crystallizes into various structures. Among them, promising results have already been reported for the most stable β-Ga₂O₃, and for α-Ga₂O₃, which has the largest bandgap energy of 5.3 eV. In this article, we overview state-of-the-art technologies of β-Ga₂O₃ and α-Ga₂O₃ for future power device applications. We will give a perspective on the advantages and disadvantages of these two phases in the context of comparing the two most promising polymorphs, concerning material properties, bulk crystal growth, epitaxial growth, device fabrication, and resulting device performance. [ABSTRACT FROM AUTHOR]