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Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs.
- Source :
- IEEE Transactions on Electron Devices; Oct2019, Vol. 66 Issue 10, p4120-4125, 6p
- Publication Year :
- 2019
-
Abstract
- Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi-fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 °C. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 139437486
- Full Text :
- https://doi.org/10.1109/TED.2019.2935500