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C-axis oriented growth of ZnO nanorods over Mg:GaN for improved heterojunction device performance.
- Source :
- AIP Advances; Oct2019, Vol. 9 Issue 10, pN.PAG-N.PAG, 6p
- Publication Year :
- 2019
-
Abstract
- Heterojunction device performance has strong dependence on its junction interface. ZnO deposition over GaN to achieve a heterojunction is challenging as it usually requires high temperature and vacuum processing. It is even more demanding to achieve a crystalline interface while making ZnO nanorod based heterojunction. Here we report simple solution process for epitaxial growth of ZnO nanorods over GaN. High resolution x-ray diffraction studies revealed highly crystalline c-axis oriented ZnO nanorod growth by a simple hydrothermal process. ZnO/GaN heterojunction device fabricated using hydrothermally synthesized ZnO nanorods showed superior performance compared to polycrystalline sputter deposited ZnO based heterojunction. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 9
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 139410649
- Full Text :
- https://doi.org/10.1063/1.5021789