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Boron improved electrochemical performance of LiNi0.8Co0.1Mn0.1O2 by enhancing the crystal growth with increased lattice ordering.
- Source :
- Journal of Materials Science: Materials in Electronics; Oct2019, Vol. 30 Issue 19, p18200-18210, 11p
- Publication Year :
- 2019
-
Abstract
- Boron-modified Li(Ni<subscript>0.8</subscript>Co<subscript>0.1</subscript>Mn<subscript>0.1</subscript>)<subscript>1−x</subscript>B<subscript>x</subscript>O<subscript>2</subscript> cathode materials(NCM811) were successfully prepared by a nano-milling assisted solid-state approach. X-ray diffraction investigations showed that the materials are solid solutions with a layered structure. SEM observations implied that the doped B ions promoted the growth of the target crystal with well-developed facets since it will form liquid phase at lower temperature. The intensity ratio of I(003)/I(104) raised with the increase in Boron doping concentration, until a maximum value of 1.453 was observed at x = 0.01. Further Rietveld refinements revealed that boron ions occupy the crystal lattice in the transition metal slab which helps to promote the lattice ordering by decreasing the Li/Ni ionic mixing. Such B promoted NCM811 cathode materials were confirmed to have an improved diffusion coefficient with a reduced interfacial resistance by subsequent CV and EIS measurements. From the electrochemical test, those B modified NCM811 cathode materials presented enhanced electrochemical performance. Among the synthesized samples, Li(Ni<subscript>0.8</subscript>Co<subscript>0.1</subscript>Mn<subscript>0.1</subscript>)<subscript>0.99</subscript>B<subscript>0.01</subscript>O<subscript>2</subscript> exhibited the best specific capacity, with 194.7 mAh g<superscript>−1</superscript> and 166.8 mAh g<superscript>−1</superscript> at 0.1C and 5C respectively. The capacity retention at 0.5C was also confirmed as 98.2% after 100 cycles. Such improvement can be explained by the reduced Li/Ni ionic mixing, the increased Li ionic diffusion and the reduced interfacial resistance caused by the promoted growth of the B doped NCM811 crystals. Compared to those NCM811 materials reported elsewhere, the material obtained by this approach showed high potential for future application. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 30
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 139078262
- Full Text :
- https://doi.org/10.1007/s10854-019-02174-3