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38.4: Top‐Gate Self‐Aligned InGaZnO TFTs with High PBTS Reliability by Employing Different H‐Incorporation Process.
- Source :
- SID Symposium Digest of Technical Papers; Sep2019 Supplement S1, Vol. 50, p428-431, 4p
- Publication Year :
- 2019
-
Abstract
- In this paper, we have demostrated high PBTS top‐gate self‐aligned IGZO TFTs by employing different H‐incorration process. Through optimization processes, PBTS is improved to 0.29 V and Vth deviation on Gen. 4.5 glass is 0.4V. Finally, 31‐inch OLED TV employing GOA circuit applied by this optimized backplane was successfully demonstrated. [ABSTRACT FROM AUTHOR]
- Subjects :
- RELIABILITY in engineering
PROCESS optimization
ORGANIC light emitting diodes
Subjects
Details
- Language :
- English
- ISSN :
- 0097966X
- Volume :
- 50
- Database :
- Complementary Index
- Journal :
- SID Symposium Digest of Technical Papers
- Publication Type :
- Academic Journal
- Accession number :
- 138954338
- Full Text :
- https://doi.org/10.1002/sdtp.13517