Improvement of TE-polarized emission in type-II InAlN–AlGaN/AlGaN quantum well.

Authors :: Yi Li
Youhua Zhu
Meiyu Wang
Honghai Deng
Haihong Yin
Source :: Chinese Physics B; Sep2019, Vol. 28 Issue 9, p1-1, 1p
Publication Year :: 2019
Abstract: The optical properties of the type-II lineup In<subscript>x</subscript>Al<subscript>1−x</subscript>N–Al<subscript>0.59</subscript>Ga<subscript>0.41</subscript>N/Al<subscript>0.74</subscript>Ga<subscript>0.26</subscript>N quantum well (QW) structures with different In contents are investigated by using the six-by-six K–P method. The type-II lineup structures exhibit the larger product of Fermi–Dirac distribution functions of electron and hole and the approximately equal transverse electric (TE) polarization optical matrix elements ( for the c1–v1 transition. As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%–53.84% as compared to that of the conventional AlGaN QW structure. In addition, the type-II QW structure with has the largest TE mode peak intensity in the investigated In-content range of 0.13–0.23. It can be attributed to the combined effect of and for the c1–v1, c1–v2, and c1–v3 transitions. [ABSTRACT FROM AUTHOR]