Oxygen-assisted synthesis of hBN films for resistive random access memories.

MLA

Lin, Weiyi, et al. “Oxygen-Assisted Synthesis of HBN Films for Resistive Random Access Memories.” Applied Physics Letters, vol. 115, no. 7, Aug. 2019, p. N.PAG. EBSCOhost, https://doi.org/10.1063/1.5100495.

APA

Lin, W., Zhuang, P., Akinwande, D., Zhang, X.-A., & Cai, W. (2019). Oxygen-assisted synthesis of hBN films for resistive random access memories. Applied Physics Letters, 115(7), N.PAG. https://doi.org/10.1063/1.5100495

Chicago

Lin, Weiyi, Pingping Zhuang, Deji Akinwande, Xue-Ao Zhang, and Weiwei Cai. 2019. “Oxygen-Assisted Synthesis of HBN Films for Resistive Random Access Memories.” Applied Physics Letters 115 (7): N.PAG. doi:10.1063/1.5100495.