Simultaneous growth of Ga2S3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor.

High quality gallium sulfide II (GaS) and gallium sulfide III () thin films on /Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga₂S₃ thin films on SiO₂/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga₂S₃ and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. [ABSTRACT FROM AUTHOR]