Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET.

A 1.2-kV rated 4H-SiC split-gate octagonal cell MOSFET (SG-OCTFET) is proposed and successfully fabricated in a 6-in foundry for the first time. The measured results quantify the benefits of the SG-OCTFET structure: improvement in high-frequency figures of merit (HF-FOM) ($\text{R}_{ \mathrm{\scriptscriptstyle ON}}\times $ C $_{\text {gd}}$) by $1.8\times $ , HF-FOM ($\text{R}_{ \mathrm{\scriptscriptstyle ON}}\times $ Q $_{\text {gd}}$) by $1.6\times $ , and FOM ($\text{C}_{\text {iss}}/\text{C}_{\text {gd}}$) by $1.6\times $ compared with the optimized compact OCTFET design due to the reduced gate-to-drain overlap area. An important conclusion of this letter is that unlike commercially available 1.2-kV SiC power MOSFETs with linear cell topology, the 1.2-kV SG-OCTFET design can outperform commercially available 600-V Si super-junction devices. [ABSTRACT FROM AUTHOR]