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Raman spectroscopy of epitaxial InGaN/Si in the central composition range.
- Source :
- Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p
- Publication Year :
- 2019
-
Abstract
- InGaN alloys are of raising interest for many applications. The possibility of tuning their functional properties with the composition sets the importance of finding methods to characterize these materials in a fast and non-destructive way. Raman spectroscopy is one of these techniques, being able to yield information about the composition, strain, and other relevant parameters. However, the method of measuring the composition with a calibration of the maximum A<subscript>1</subscript>(LO) band is today limited to regions which are either rich in In or in Ga. The middle composition range still needs a calibration. By measuring the Raman spectra of different In<subscript>x</subscript>Ga<subscript>1-x</subscript>N alloys grown epitaxially on Si and by comparing them with the results from X-ray diffraction, we investigated this missing region of compositions. Within the range of 30%–65%, we have found that the position of the maximum of A<subscript>1</subscript>(LO) scales with the In fraction x as ω<subscript>x</subscript> = 736 – 135x – 24x<superscript>2</superscript> cm<superscript>−1</superscript>. With this calibration, it is possible to determine, by Raman spectroscopy, the composition of an unknown alloy with an uncertainty of 5%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00214922
- Volume :
- 58
- Issue :
- SC
- Database :
- Complementary Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 137177046
- Full Text :
- https://doi.org/10.7567/1347-4065/ab0f1e