Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles.

Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied. [ABSTRACT FROM AUTHOR]