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Exciton-exciton annihilation in hBN.

Authors :
Plaud, A.
Schué, L.
Watanabe, K.
Taniguchi, T.
Fossard, F.
Ducastelle, F.
Loiseau, A.
Barjon, J.
Source :
Applied Physics Letters; 6/10/2019, Vol. 114 Issue 23, pN.PAG-N.PAG, 5p, 3 Graphs
Publication Year :
2019

Abstract

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by cathodoluminescence at low temperature. Thanks to a careful tuning of the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2 × 10<superscript>−6 </superscript>cm<superscript>3</superscript> s<superscript>−1</superscript> at T = 10 K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probably contributes to the luminescence quenching observed in low-dimensionality BN materials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
114
Issue :
23
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
137016290
Full Text :
https://doi.org/10.1063/1.5090218