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Tuning the electronic properties of epitaxial strained CaFeO3−δ thin films.
- Source :
- Applied Physics Letters; Jun2019, Vol. 114 Issue 22, pN.PAG-N.PAG, 4p, 4 Graphs
- Publication Year :
- 2019
-
Abstract
- Strain engineering of transition metal oxides due to their desirable properties has long been a focal point in both physics and material sciences. Here, we investigate the strain dependence of electronic and optical properties of the high valence iron-based perovskite CaFeO<subscript>3−δ</subscript>. Using substrates with various lattice constants, we achieve a wide range of tunable epitaxial strain states in CaFeO<subscript>3−δ</subscript> thin films ranging from compressive −0.37% to tensile 3.58%. Electrical transport and optical absorption measurements demonstrate a distinct strain-dependent behavior, in which larger tensile strain leads to higher electrical resistivity and a larger optical bandgap. We attribute these modulations to tensile strain suppressed p-d hybridization in CaFeO<subscript>3−δ</subscript>, as evidenced by soft X-ray absorption spectra measurements. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 114
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 136880895
- Full Text :
- https://doi.org/10.1063/1.5098025