GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging.

MLA

Tadjer, Marko J., et al. “GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,Max = 56 W/Mm Measured by Transient Thermoreflectance Imaging.” IEEE Electron Device Letters, vol. 40, no. 6, June 2019, pp. 881–84. EBSCOhost, https://doi.org/10.1109/LED.2019.2909289.

APA

Tadjer, M. J., Anderson, T. J., Ancona, M. G., Raad, P. E., Komarov, P., Bai, T., Gallagher, J. C., Koehler, A. D., Goorsky, M. S., Francis, D. A., Hobart, K. D., & Kub, F. J. (2019). GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging. IEEE Electron Device Letters, 40(6), 881–884. https://doi.org/10.1109/LED.2019.2909289

Chicago

Tadjer, Marko J., Travis J. Anderson, Mario G. Ancona, Peter E. Raad, Pavel Komarov, Tingyu Bai, James C. Gallagher, et al. 2019. “GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,Max = 56 W/Mm Measured by Transient Thermoreflectance Imaging.” IEEE Electron Device Letters 40 (6): 881–84. doi:10.1109/LED.2019.2909289.