P‐14: Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting.

We report stable and high performance a‐IGZO TFT by using bulk‐accumulation (BA) and split active /source/drain layers. The a‐IGZO TFTs exhibit the mobility over 80 cm2/Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4‐inch semi‐transparent AMOLED using the oxide TFT backplane with the gate driver integrated. [ABSTRACT FROM AUTHOR]