P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure.

This work developed a back‐channel‐etched In‐Ga‐Zn‐Sn‐O (IGZTO) thin‐film transistor (TFT) with a high mobility of 41 cm2/Vs by optimizing both the IGZTO composition and the fabrication process. Furthermore, an effective mobility of 99 cm2/Vs was achieved for an IGZTO‐TFT with a dual‐gate structure. [ABSTRACT FROM AUTHOR]