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Defect structure and properties of Zn diffusion doped Si after swift Xe ion irradiation.
- Source :
- Journal of Physics: Conference Series; 2019, Vol. 1190 Issue 1, p1-1, 1p
- Publication Year :
- 2019
Details
- Language :
- English
- ISSN :
- 17426588
- Volume :
- 1190
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Physics: Conference Series
- Publication Type :
- Academic Journal
- Accession number :
- 136596271
- Full Text :
- https://doi.org/10.1088/1742-6596/1190/1/012011