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Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap Charges.
Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap Charges.
- Source :
- IEEE Transactions on Electron Devices; Apr2019, Vol. 66 Issue 4, p1979-1984, 6p
- Publication Year :
- 2019
-
Abstract
- In this paper, the effect of negative-capacitance (NC) on germanium FinFET (GeFinFET) with the presence of fixed trap charges (${N}_{\text {ftc}}$) has been studied. The analysis of various parameters of NCGeFinFET has shown that the positive trap charges improve the device characteristics whereas the negative trap charges (NTC) degrade the performance of devices. Therefore, we have optimized properties of ferroelectric (FE) to suppress the degradation caused by NTC. Furthermore, the impact of ${N}_{\text {ftc}}$ has been studied on the output characteristics of NCGeFinFET inverter, and it has been shown that the degradation due to NTC reduces by optimizing the FE properties. It has also been demonstrated that NCGeFinFET exhibits excellently improved characteristics as compared to GeFinFET. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRIC capacity
GERMANIUM
LOGIC circuits
ELECTRIC inverters
FERROELECTRIC crystals
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 136509806
- Full Text :
- https://doi.org/10.1109/TED.2019.2897637