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Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap Charges.

Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap Charges.

Authors :
Bansal, Monika
Kaur, Harsupreet
Source :
IEEE Transactions on Electron Devices; Apr2019, Vol. 66 Issue 4, p1979-1984, 6p
Publication Year :
2019

Abstract

In this paper, the effect of negative-capacitance (NC) on germanium FinFET (GeFinFET) with the presence of fixed trap charges (${N}_{\text {ftc}}$) has been studied. The analysis of various parameters of NCGeFinFET has shown that the positive trap charges improve the device characteristics whereas the negative trap charges (NTC) degrade the performance of devices. Therefore, we have optimized properties of ferroelectric (FE) to suppress the degradation caused by NTC. Furthermore, the impact of ${N}_{\text {ftc}}$ has been studied on the output characteristics of NCGeFinFET inverter, and it has been shown that the degradation due to NTC reduces by optimizing the FE properties. It has also been demonstrated that NCGeFinFET exhibits excellently improved characteristics as compared to GeFinFET. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
66
Issue :
4
Database :
Complementary Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
136509806
Full Text :
https://doi.org/10.1109/TED.2019.2897637