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Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy.
- Source :
- Nanotechnology; 7/12/2019, Vol. 30 Issue 28, p1-1, 1p
- Publication Year :
- 2019
-
Abstract
- In this paper, micro-Raman mapping and conductive atomic force microscopy (C-AFM) were jointly applied to investigate the structural and electrical homogeneity of quasi-free-standing monolayer graphene (QFMLG), obtained by high temperature decomposition of 4H-SiC(0001) followed by hydrogen intercalation at 900 °C. Strain and doping maps, obtained by Raman data, showed the presence of sub-micron patches with reduced hole density correlated to regions with higher compressive strain, probably associated with a locally reduced hydrogen intercalation. Nanoscale resolution electrical maps by C-AFM also revealed the presence of patches with enhanced current injection through the QFMLG/SiC interface, indicating a locally reduced Schottky barrier height (Φ<subscript>B</subscript>). The Φ<subscript>B</subscript> values evaluated from local I–V curves by the thermionic emission model were in good agreement with the values calculated for the QFMLG/SiC interface using the Schottky–Mott rule and the graphene holes density from Raman maps. The demonstrated approach revealed a useful and non-invasive method to probe the structural and electrical homogeneity of QFMLG for future nano-electronics applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- ATOMIC force microscopy
GRAPHENE
THERMIONIC emission
SCHOTTKY barrier
HYDROGEN
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 30
- Issue :
- 28
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 136121048
- Full Text :
- https://doi.org/10.1088/1361-6528/ab134e