A novel lead‐free bismuth magnesium titanate thin films for energy storage applications.

Bismuth magnesium titanate thin films were prepared on platinized silicon wafers via modified sol‐gel deposition method. Highly dense samples with pseudo‐cubic structure were obtained under proper thermal treatment technique. Electric breakdown strength was dependent on annealing temperature which resulted in the variation of energy storage performances. The optimal charged energy storage density Wc~ 47.8J/cm3 and recoverable energy storage density Wreco ~26.0 J/cm3 of the 640°C annealed films at 100 Hz were achieved, respectively. This dielectric film can be a promising candidate for high voltage lead‐free energy storage applications due to their excellent performances. [ABSTRACT FROM AUTHOR]